Monday, July 17, 2006
Samsung Electronics Co. has delayed the shipment of its 8-gigabit NAND flash part, while the company is also quietly developing a new 4-bit-per-cell NAND technology, according to American Technology Research Inc.
The 4-bit flash technology enables four bits of information to be stored on one flash memory cell — twice as much as 2-bit/cell MLC NAND flash wafers manufactured through equivalent lithography allows.
Samsung's technology would be competitive to M Systems Flash Disk Pioneers Ltd. (Kfar Saba, Israel), Saifun Semiconductors Ltd. (Netanya, Israel) and others. M Systems said that it expects to start mass-producing its recently-announced, x4 NAND flash components by early 2007.
Saifun has developed a 4-bit-per-cell technology, dubbed Quad-NROM. It has licensed the technology to Infineon, Spansion, among others.
By: DocMemory
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