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Flexible OTP memory goes high voltage


Monday, July 24, 2006 Taiwanese IP provider eMemory Technology Inc. is extending its one-time programmable Neobit technology to a 0.15-micron high voltage process.

The company is targeting high-growth markets, such as LCD driver ICs, analog ICs and power management ICs, where the IP can be used for circuit trimming and performance tuning.

Neobit has the characteristics of Eprom, used to store program data code, but uses a simple, logic-based process that is more easily ported among fabs. Unlike ROM, the memory's programming flexibility would allow for coding before or after processing, which would give MCU makers greater latitude in controlling inventory. Although the cell is one-time programmable, redundant blocks can be added to achieve a multi-programmable array.

Introduced in 2003, Neobit IP has been in products accounting for more than 50,000 wafers, according to eMemory. In the past, the company has said it is also targeting Neobit at microcontrollers, RFID chips and IC smart cards, and as a repair mechanism for bad pixels in CMOS imagers, or as a redundancy fuse circuit in commodity memory.

With the inclusion of 0.15 micron, Neobit is available in high voltage processes covering 0.6, 0.5, 0.35, 0.25, 0.22 and 0.18-microns.

By: DocMemory
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