Thursday, August 3, 2006
Fujitsu Ltd. claims to have developed a new material for next-generation ferroelectric random access memory (FeRAM) devices.
The material is a modified composition of bismuth ferrite (BiFeO3 or BFO), which enables data storage capacity up to five times greater than the materials currently used in FeRAM production, according to Fujitsu (Tokyo).
New FeRAMs can be produced with Fujitsu's 65nm process technology using the BFO-based material in a device structure similar to the one used to build FeRAMs using 180-nm technology. FeRAMs using this material can provide memory cell capacity up to 256-Mbits, according to the company.
Engineering sample shipments are planned for 2009.
By: DocMemory
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