Friday, September 8, 2006
Engineers from Qimonda AG are set to report on a 58-nanometer DRAM manufacturing process technology at the International Electron Devices Meeting (IEDM) due to be held in San Francisco, Dec. 11 to 13, 2006.
The most advanced fully integrated and production-worthy technologies for producing dense DRAM memories are in the 70-nm to 80-nm range. Samsung Electronics announced it had begun mass producing 1-Gbit DRAMs using 80-nm process technology in August 2006.
Researchers from Qimonda are expected to present on a fully integrated 58-nm process technology which they used to produce a 512-Mbit DRAM operating at between 1.2-V and 1.35-V, with access times that support data rates of 3.2-Gbits per second per pin.
By: DocMemory
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