Qimonda AG and Nanya Technology Corp. today announced the successful qualification of 75nm DRAM trench technology and the first 75nm product they are each offering to the market, a 512Mb DDR2 memory chip.

The technology and 512Mb DDR2 product have been jointly developed at Qimonda's development centers in Dresden and Munich, Germany. Volume production in the new DRAM technology generation, which features minimum structure sizes down to 70nm, has been started at Qimonda's 300mm production line in Dresden.

"With the qualification of our 75nm DRAM trench technology and the first product we have reached an important milestone on our technology roadmap," said Thomas Seifert, a member of Qimonda’s management board, in a statement. "The 75nm technology platform satisfies the performance requirements of upcoming high speed interfaces such as used for DDR3 and graphics products."

Qimonda, the spun off company of Infineon’s memory business, noted that process structures of 75nm further reduce chip size compared to the previous 90nm technology, thereby increasing potential chip output per wafer by about 40 percent.

"The advanced technologies enable us for high performance and high density, such as 1Gb / 2Gb DRAM, with competitive cost structure," Dr. Pei Lin Pai, VP of global sales and marketing at Nanya, said in the statement.

The 512Mb DDR2 product in the 75nm technology meets the performance requirements at the maximum JEDEC defined DDR2 speed for high end server and computing applications, the companies said.

Qimonda also works with Winbond on DRAM trench technology, last month announcing it would transfer its 80nm DRAM trench technology to Winbond's 300mm facility.

By: DocMemory
Copyright © 2023 CST, Inc. All Rights Reserved