The device will be based on Saifun's patented 4-bit-per-cell Quad NROM technology and made using SMIC's advanced process technology.

The companies already work together on lower density flash memories and SMIC recently delivered its first engineering samples of its 2Gb NAND flash product based on the Saifun NROM two-bit-per-cell technology. The companies are targeting mass production of the device by the end of this year.

Saifun said its Quad NROM four-bit-per-cell technology represents a breakthrough in existing NVM technology by doubling the storage capacity of conventional memory cells and providing a simpler architecture that requires fewer manufacturing steps and reduces manufacturing costs.

It adds the development of an 8Gb Data flash on SMIC's advanced process "demonstrates the advantages of Quad NROM in enabling the most cost-effective flash manufacturing processes on the market today."

Other companies looking at 8Gb NAND flash include Samsung and M Systems Flash Disk Pioneers Ltd. (Kfar Saba, Israel). M Systems said that it expects to start mass-producing its recently-announced, x4 NAND flash components by early 2007. Dr. Boaz Eitan, Chairman and CEO of Saifun, said: "We believe that the combination of the innovation and dedication of SMIC with Saifun's unique NROM technology positions both companies very well to become significant players in the very lucrative Data market."

Saifun licenses its non-volatle memory IP to a host of companies, including Qimonda AG, Macronix International, NEC Electronics, Sony Corporation, Spansion, and Tower Semiconductor.

By: DocMemory
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