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Hynix develop 512Mbit Mobile DRAM


Monday, December 4, 2006

Hynix Semiconductor announced it has developed 512Mbit mobile DRAM in 200MHz frequency, the so-called fastest and smallest mobile DRAM.

Hynix also reported that they are almost at the final stage of receiving the world's first validation from a major mobile chipset company.

By using 32-bit wide I/Os, Hynix said its 512Mb mobile DDR SDRAM processes 1.6Gbytes (400 bps x32) of data per second, which is approximately 1.5 times faster than speed of the company's existing mobile DRAM products.

Hynix expects this new new mobile DRAM to enhance the company's competitiveness in mobile applications, which is driving the trend towards miniaturization (8mm×10mm). Moreover, Hynix is expected to combine 512Mbit mobile DRAM and NAND flash in a multi-chip package (MCP).

By: DocMemory
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