Monday, December 18, 2006
Hynix Semiconductor unveiled high capacity modules based on its 60nm 1Gbit DDR2 DRAM chips. This new memory is aimed for high performance graphic and mobile markets.
The 1GB and 2GB unbuffered DIMMs operate at an data rate of 800MHz. The manufacturing cost of producing 1Gbit DRAM using 60nm process is expected to decline up to 50% compared to the first generation 80nm technologies, Hynix highlighted.
The resulting 1Gbit package size will allow Hynix to cost-efficiently manufacture 4GB and higher density RDIMMs (registered DIMM) and FBDIMMs (fully buffered DIMM), the company said.
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