Tuesday, January 23, 2007
SanDisk Corp. announced the of launch of its 56-nm, multi-level cell (MLC) flash memory chips this month with Toshiba Corp. at Fab 3 (300-mm) wafer fabrication near Nagoya, Japan.
The SanDisk-Toshiba duo were originally supposed to roll out 52-nm NAND devices, but the company scaled back its technical targets, and instead, devised 56-nm parts, due to the complexities of the technology.
After qualifying limited engineering samples, SanDisk plans to introduce the new 8-gigabit single-chip, MLC NAND flash memory on 56-nm process technology in the coming weeks, with commercial shipments slated for later in the first quarter.
In Q2, the company expects to introduce monolithic 16-gigabit NAND, which will be the highest density single-chip MLC NAND flash memory in the industry.
By: DocMemory
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