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Qualcomm announced VR development kit 2/27/2017
The VRDK is expected to be available in the second quarter of 2017. It is engineered to help developers attain improved VR performance and power efficiency for upcoming VR OEM devices built with the Snapdragon 835.
Toshiba samples 512Gbit 3D NAND with 64 layers 2/24/2017
Toshiba is sampling 64-layer 3-bit-per cell 512Gbit 3D NAND.
Exynos 9 is 10 core with 10nm FinFET processs 2/24/2017
Samsung said it plans to apply the new FinFET technology to Exynos 9 which is widely predicted by analysts to be installed in the tech company's next flagship smartphone, the Galaxy S8, scheduled to be released as early as next month.
Over 100 million GPU's shipped in Q4 2/24/2017
Among the big three suppliers, AMD and Nvidia both increased shipments by 10% in the fourth quarter (sequentially), while Intel shipments were down 4%. Discrete GPUs gained market over integrated units.
SK Hynix to bid on Toshiba Semiconductors 2/24/2017
SK Hynix said earlier that it had submitted a non-binding bid for a stake in the business on Feb. 3, without specifying the size of the stake. It will consider a fresh bid should Toshiba make another offer.
Tsinghua Unigroup plans IPO 2/23/2017
Unigroup Spreadtrum RDA, China's top mobile chipmaker which supplies to Samsung Electronics, has been spearheading Beijing's ferocious efforts to cultivate its domestic semiconductor industry to reduce dependence on foreign imports due to economic and security concerns.
Globalfoundries offer 45nm RFSOI process acquired from IBM 2/23/2017
Designers can stack RF FETs in the process to achieve higher power and reliability. Active FETs can be “tuned for very high Ft/Fmax” for mmwave circuits in 5G products and front-ends for car radar.
U.S. Government clears Renesas/Intersil merger to go ahead 2/23/2017
The investigation of the merger transaction under which Renesas will acquire Intersil is complete and that there are no unresolved national security concerns with respect to the transaction.
Supreme Court: U.S. patent law does not cover export of a single component 2/23/2017
The justices ruled unanimously on Wednesday that the company's shipment of a single part of a patented invention for assembly in another country did not violate patent laws.
Foxconn starts massive recruit of college grads in China 2/22/2017
It marks the biggest college recruitment campaign undertaken by the giant electronics firm, which employs more than a million workers in its factories across China.
Micron to complete R & D facility in Boise 2/22/2017
Micron needs space because of a wider product base the company supports globally, including products from former Japanese chip maker Elpida Memory Inc., which Micron bought in 2013.
Pure-play foundries partner with memory companies on new process technology 2/22/2017
Pure-play foundries are partnering with their fabless clients to fabricate next-generation memory types, such as 3D NAND, MRAM and ReRAM, while memory chipmakers are developing the next-generation technologies in-house.
Toshiba wants $8.8 billion for semiconductor unit 2/22/2017
The company wants to take time negotiating the best price possible without setting a concrete deadline, although it aims to reach an agreement before the end of the next fiscal year.
Server memory demand drive memory module prices up 2/21/2017
Contract prices of server DRAM modules will increase by almost 40% sequentially on average this first quarter. The contract market for server DRAM modules is expected to see another sequential price hike of 10% in the second quarter.
Xiaomi to announce its own "Pinecone" AP chip 2/21/2017
Rather than fully relying on the likes of Qualcomm and MediaTek, Xiaomi can take advantage of Leadcore's cellular radio technology for its own chipsets, thus keeping costs down in the long term.
2016 R & D spending ranked 2/21/2017
Intel Corp. came first with R&D expenditures of $12.7 billion, followed by Qualcomm Inc. with $5.1 billion and Broadcom Ltd. with $3.1 billion.
Startup company bets on carbon nonotube RAM 2/21/2017
The carbon nanotubes move from position to position in picoseconds. So it’s a very fast memory. It requires low energy to write. And it doesn’t wear out.
Foxconn chairman pledged shares for loan to build new display plant 2/20/2017
At the end of December last year, Gou signed an agreement with Guangzhou authorities to invest 61 billion yuan (US$8.8 billion) to build an advanced 8.5G flat-panel complex focusing on organic light-emitting diode (OLED) screen production.
Super Micro offers high density server 2/20/2017
Super Micro’s 5th Gen 2U server, BigTwin, supports 205W CPUs, 24 DIMMs and 24 All-Flash NVMe.
Cypress provides chip for both USB-C video and HDMI operations 2/20/2017
All HD and 4K televisions include HDMI connections, but previously connecting USB-C enabled source devices required adapters or converters that do not enable all native HDMI features. Cypress' EZ-PD CCG3 silicon is doing the conversion and management work.
Korean memory manufacturers to up their Capex 2/20/2017
South Korean semiconductor businesses are increasing investment in facilities this year by approximately 30 percent compared. This is to secure technological advantage over other competitors with large preemptive investments.
Bad news hit Toshiba 2/17/2017
In one day, the company lost its chairman, said it will stop building nuclear power plants, wrote off about US$6.2 billion relating to that business, and postponed its fourth-quarter earnings report for a month.
Mobile DRAM continue to grow 2/17/2017
DRAMeXchange, a division of TrendForce, finds that the global mobile DRAM revenue for the fourth quarter increased by about 20% sequentially to reach around US$5.51 billion.
ADI quarterly result beat estimate 2/17/2017
Company expects revenue to grow 17% over the prior year, which would represent the 4th consecutive quarter of year-over-year revenue growth for ADI.
Panasonic/UMC partners in ReRAM memory 2/17/2017
The partners plan to use a 40-nanometer fabrication process to make ReRAM chips that can run on as little as one-seventh the power of today's NAND flash memory.
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